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| BB831... Silicon Variable Capacitance Diodes Frequency range up to 2 GHz Special design for use in TV-sat indoor unit 1 BB831 2 Type BB831 Package SOD323 Configuration single LS (nH) Marking 1.8 white T Maximum Ratings at TA = 25C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage Forward current Operating temperature range Storage temperature (R 5k ) IF Top Tstg 20 -55 ... 125 -55 ... 150 mA C Symbol VR VRM Value 30 35 Unit V 1 Nov-07-2002 BB831... Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 28 V, f = 1 MHz CT Unit max. nA typ. IR 20 500 pF 7.8 0.85 8.8 1.02 8.6 1 9.8 1.2 9.5 3 % Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz VR = 1 V, VR = 28 V, f = 1 MHz CT1 /CT28 CT/CT 7.8 - VR = 1 V, f = 100 MHz 1For details please refer to Application Note 047. 2 Nov-07-2002 Series resistance Capacitance matching1) rS BB831... Diode capacitance CT = f = 1MHz BB 811 (VR) Temperature coefficient of the diode 12 CT pF 10 EHD07053 10 -3 1/C 8 TC C 6 10 -4 4 2 0 10 -1 10 0 10 1 V VR 10 2 10 -5 0 10 3 capacitance TCc = (VR ) 10 1 V 10 2 VR Nov-07-2002 |
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